Description

Strategic analysis paper

Home organization: Revlon

The organization we are acquiring: ELF beauty

*This paper might require more pages, I would suggest not to focus on the appearance of it just the writing. For examples do not do the cover page, table of contents, line or paragraph spacing.

step 1: Conduct strategic analysis work on your “Home Organization”

Following careful research on your part—prepare a Competitive Profile Matrix (CPM; Ch. 3, p. 78-81) on your “home organization” using several competitors. You must include this CPM in your final paper.

Utilizing what you are learning from Chapters 1-6, perform a strategic analysis on your home organization. In your prepared analysis, you are required to include at least these five in addition to the CPM described in above:

- Evaluation of Mission and/or Vision Statement (Ch. 2, p. 47-51)
- External Factor Evaluation Matrix (EFE; Ch. 3, p. 77-78)
- Internal Factor Evaluation Matrix (IFE; Ch. 4, p. 116-118)
- Financial Ratio Analysis (Ch. 4, p. 104-106)—select at least one ratio from each of the five types (liquidity, leverage, activity, profitability, growth)—calculate and interpret each. You are not limited to only five—do more if you wish. Choose ratios with which you are most familiar and which hold the best promise of providing you useful information.
- The SWOT Matrix (Ch. 6, p. 171-174)

When you include these matrices in your final paper, do not merely include a statistical

summary of the matrix. You are to present the full detail of the matrix in addition to your interpretation of the results. For example, if you are doing the External Factors Matrix (EFE), you are to show your entire list of opportunities (5-10 etc.) and your entire list of threats accompanied by the weight, rating, weighted score, and final total.

The student should not include in this section the complete copy of the “Home” organization’s Income Statement and/or Balance Sheet required in Step 1 above.

Step 2: Conduct Strategic Analysis work on the Organization you plan to acquire

It is not a requirement of this assignment, but you may find it desirable to prepare a CPM on your second organization especially if they are not a competitor of your home organization.

Using the same five required analyses listed above for your “home organization,” prepare the same detailed analysis of the company you propose to acquire.

- Evaluation of Mission and/or Vision Statement (Ch. 2, p. 47-51)
- External Factor Evaluation Matrix (EFE; Ch. 3, p. 77-78)
- Internal Factor Evaluation Matrix (IFE; Ch. 4, p. 116-118)
- Financial Ratio Analysis (Ch. 4, p. 104-106)—select at least one ratio from each of the five types (liquidity, leverage, activity, profitability, growth)—calculate and interpret each of the chosen five, and include them in your analysis. You are not limited to these five. Choose ratios with which you are most familiar and which hold the best promise of providing you useful information.
- The SWOT Matrix (Ch. 6, p. 171-174)

A comparison of these matrices should provide you a rich resource of information to compare and contrast the two companies, evaluate strengths and weaknesses of both, the benefits, the hazards, the cautions, etc., regarding acquisition, etc.

The student should not include in this section the complete copy of the “Home” organization’s Income Statement and/or Balance Sheet required in Step 1 above.

Step 3: You may want to consider additional analyses

(these are not a requirement for your paper)

Additional, optional Strategic Analysis tools are described in our text which you can choose to use for your analysis—this is not a formal requirement for your paper:

As you work on this strategic analysis, you are urged to use what you consider to be the strengths you bring to this class (accounting, marketing, finance, etc.) based on previous academic training and/or personal experience. Leverage what you are already good at as you select (as you see fit) other analysis tools to include in your Strategic Analysis Paper from the list below—you, of course, are not limited to this list:

Value Chain Analysis (VCA; Ch. 4, p. 113-116)

Porter’s Five –Forces Model (Ch. 3, p. 71-74)

Strategic Position and Action Evaluation Matrix (SPACE; Ch. 6, p. 174-178)

Boston Consulting Group Matrix (BCG; p. 178-181)

Internal-External Matrix (IE; Ch. 6, p. 181-184)

Grand Strategy Matrix (GSM; Ch. 6, p. 185-186)

Your professor wants to strongly suggest you might look closely at a couple of these for possible use in your paper . . .especially Porter’s Five Forces, and the SPACE matrix. . .but none of the above is a requirement for your paper.

Step 4: Make your decision about possible acquisition

Do a thorough comparison of the prospective acquisition company with your own organization with a view of proceeding with the acquisition.

As part of your comparison, analysis, and decision-making, you are required to use the Quantitative Strategic Planning Matrix (QSPM; Ch. 6, p. 186-190) to further guide you in your decision process. You are to include this QSPM in your final paper and indicate how you used the statistical summary to guide you.

You may also use information found in the text to help with your determination. For example, you might choose to use “merger/acquisition” strategies on p. 150-151. . .or, using the information gleaned from a BCG matrix for both organizations. You should take into account information on why acquisitions fail (page 150, Table 5-5) and some of the anticipated benefits of acquisition (page 151, Table 5-6) given in our textbook.

If in your research you are able to get a good grasp of what the organizational cultures of your two organizations are like, it would be a really smart idea to include in your paper some analysis of what the possible acquisition of a company might mean in terms of impact to the cultures of both companies. Are they significantly different? Very much alike? Would the acquisition tend be traumatic or relatively easy?

Step 4: Write your paper

Your Strategic Analysis Paper needs to conclude with either (1) a strategy to proceed with the acquisition, and what would be the anticipated benefits and challenges; (2) a strategy to abandon the acquisition effort, and your reasons why; or, (3) a strategy to continue pursuing the acquisition but conditional on gaining additional, essential, confirming information. You must specify what that information might include, but you are not actually required to develop it.

With all three possible conclusions, you must include a full development of your reasons for arriving at that conclusion.

A suggested outline for your Strategic Analysis Paper might be:

Introduction /Purpose of the paper—be sure your paper addresses these two

Strategic Analysis of “Home” Company

Strategic Analysis of the Company to Possibly Acquire

Comparison/Contrast of the Two Companies

Your Strategic Plan Regarding Possible Acquisition

You are not required to follow this suggested outline; rather you may create your own which may serve your purposes far better.

In preparing your paper, you have the latitude to either blend your matrix tables into the text of your paper, or you may cite them in the text as Appendices found at the conclusion of your paper.

Your paper should follow basic, simple APA guidelines to format your paper (your professor does not want to be burdensome with this). That is, prepare a cover and reference page for your paper following the APA formats, then follow these basic requirements: use 1” margins on all four sides, double space everything, use only 12-point font, allow 5-7 space indentions, and number your pages starting with the cover sheet (do not use the APA “Running head”).

Sample Solution

NON EQUILLIBRIUM GREEN'S FUNCTION TECHNIQUE USED FOR THE METAL-INSULATOR-METAL DIODES ANSHUMAN Hardware and Communication Dept. NIT Kurukshetra Conceptual – In this paper hypothetical investigation of NEGF strategy, including the vehicle condition and Poisson condition, is done trailed by the inference of a logical model utilizing NEGF burrowing likelihood through any number of protecting layers. Numerical NEGF test system are demonstrated coordinating with the AF-TMM test system results. Presentation THE STUDY OF burrowing marvels in Metal Insulator Metal (MIM) is a significant point for the point of the advancement of rectennas for vitality gathering and infrared identifiers applications. In spite of the fact that the enthusiasm for Metal-Insulator-Metal (MIM) diodes goes back to 1950s [1]–[4], yet they pulled in the consideration again over the most recent couple of years because of its applications, vitality gathering [5]–[8] and infrared/terahertz identifiers [9]–[11]. Prior, different scientific articulations for the burrowing transmission likelihood through MIM diodes were created dependent on WKB estimate [2]–[4]. Notwithstanding, the WKB does not think about the wave work reflections at the interface between various layers [14]. Along these lines, there came the requirement for different models to recreate the burrowing likelihood. Non Equilibrium Green Function (NEGF) [12] numerical technique is one of the strategies used to figure the burrowing transmission likelihood [15]–[18]. It is an exact numerical technique, yet it needs significant time-frame of computations on a PC in contrast with other explanatory models. Any program utilized for the reproduction of a gadget plays out an answer of vehicle condition and "Poisson" condition [19].The transport condition gives the electron thickness, n(r) and the current, I for a known potential profile U(r), while Poisson condition gives the successful U(r), felt by an electron because of the nearness of other electron in its region. Here, in this paper the Quantum transport, Green's capacities and its different conditions under non balance condition are talked about and a definite quantum mechanical displaying of the burrowing current through MIM diodes is exhibited. An explanatory articulation for the burrowing transmission likelihood is introduced utilizing the NEGF conditions for any number of encasing layers between the two metals. Fig.1. Transport of electrons for single vitality level gadget The paper is sorted out as pursues: in Section II, the vehicle conditions are examined. In area III NEGF conditions for MIM Diode is portrayed in detail. The administering conditions and numerical execution of it is sketched out. The material parameters utilized in the reproduction are additionally condensed. GENERAL TRANSPORT EQUATION How about we consider the model for a solitary gadget sandwiched between two metals 1and 2ION THE METAL-INSULATOR.ce of other electron in its vicinity.port and "111111111111111111111111111111111111111111, as appeared in fig. 1.The gadget is thought to have a solitary vitality level, Ô. Our first point is to locate the quantity of electrons, N in the gadget. Let Ef be the Fermi level set by the work capacity of the two metal contacts under the balance condition. On applying the predisposition voltage, Vb between metal 1 and 2, the Fermi-energies of two metals gets adjusted to µ1 and µ2 individually and given as [19]: (1) This distinction in Fermi-vitality offers ascend to a non-balance condition and consequently two diverse Fermi-capacities for the two contacts. On the off chance that gadget is in harmony with metal 1, at that point number of electrons will be f1 however on the off chance that it is in balance with metal 2, number of electrons will be f2, where (2) Let and be the pace of departure of electron from gadget into metal 1 and metal 2 separately. Along these lines the flows I1 and I2 crossing metal1 and 2 interfaces are given as[20]: Furthermore, (3) For I1 = I2 = I, we get consistent state number of electrons N and current I as: (4a) (4b) Because of the connected predisposition voltage one of the store continues siphoning the electron attempting to build the number while different continues discharging it attempting to bring down the number. At last, there is a constant progression of current, I (eq. 4b) in the outer circuit. Accepting ðœ‡1 > ðœ€ > μ2 and the temperature is low enough that f1 (ε) ≡ f0 (ε − μ1) ≈ 1 and f2 (ε) ≡ f0 (ε − μ2) ≈ 0, the Eq. 4b disentangles to [21]: In the event that = (5) Eq.5 recommends that we can stream a boundless current through this one level gadget in the event that we increment, for example by coupling the gadget more and unequivocally to the metal contacts. Be that as it may, the most extreme conductance of a one-level gadget is equivalent to [20], so there must be some decrease factor. This decrease is because of the widening of the discrete level that happens on account of expanded coupling of the gadget with the two metals. This expanded discrete level can be portrayed by the circulation: With line-width of γ and move of level from ε to ε+âˆ†, where. This expanding wonders adjusts the Eqs. (4a, b) to incorporate a necessary over all energies weighted by the dispersion D(E) [13]: (6a) (6b) Utilizing mathematical control Eqs. (6a, b) progresses toward becoming: (7a) (7b) Where (8) (9) Till now we have talked about gadget with single vitality level ε. Be that as it may, in commonsense circumstance (for example for genuine gadgets) there exist numerous vitality levels. Any gadget, as a rule, can be spoken to by a Hamiltonian framework, whose eigenvalues tells about the permitted vitality levels. For instance on the off chance that we depict the gadget utilizing a powerful mass Hamiltonian H = at that point it very well may be spoken to with a (NxN) framework by picking a discrete cross section with N point and applying strategies for limited contrasts [13]. This compares to utilizing a discretized genuine space premise. Correspondingly, we characterize self-vitality lattices [∑1,2] which depict the widening and move of vitality levels because of coupling with the two metals. The required NEGF conditions currently can be acquired from Eqs(7a, b) by supplanting scalar amounts ε and σ1,2 with the comparing lattices [H] and [∑1,2], and is given as: , (10) , (11) The quantity of electrons N, in the gadget is supplanted with the thickness grid, given by: {} (12) Current is as yet spoken to by Eq. (7b). The transmission can be given as the hint of the similar to grid amount: (13) TRANSMISSION EQUATION FOR MIM DIODE USING NEGF EQUATIONS The 1D time-free single-molecule Schrödinger condition is given by [13]: Where, is the diminished Plank steady, ψ(x) is the electron wave-work, m is the compelling mass and U(x) is the potential vitality. On the off chance that it is expected that the cover layers are isolated into M network focuses having uniform dispersing, an, at that point limited distinction discretization on the 1D lattice is connected to Schrödinger condition Eq. (1) at every hub I as pursues [14]: (2) Where, speaks to the association between the closest neighbor network focuses I and i+1, Ui ≡ U (xi), and mi is the electron viable mass between the hubs I and I + 1. The coupling of the potential boundary to one side and right metal anodes is contemplated by revamping Eq. (1) for I =1 and I = M with open limit conditions communicated at Metal1/Insulator and Insulator/Metal2 interfaces. In this way, Schrödinger condition presently takes the accompanying structure [13]: (3) Where, H is the M × M Hamiltonian framework of the encasing potential, I is the M × M personality network, ψ is the wavefunction M × 1 vector and S is M × 1 vector. ∑L and ∑R are simply the M × M energies of the left and right contacts separately. Fig. 1. Capability of a pile of N separator materials under connected inclination voltage, Vb. Every protector layer is portrayed by an obstruction stature (Uj), a thickness (d j), a dielectric steady ε j, and a viable mass (m j). Presently, under a tri-inclining structure H can be modified as: ∑L and ∑R are given as: The arrangement of Eq. (1) can be given in the terms of impeded Green's capacity as where is M×M hindered Green's capacity [13]: The pace of departure of electron to either left or right metal from a given state can be thought about by characterizing two amounts, ΓL and ΓR [14]. Thus, the burrowing likelihood would now be able to be registered as [14]: COMPARISION OF NEGF MODEL WITH OTHER MODELS A model of MIIM diode was reenacted utilizing NEGF, AF-TMM and WKB Approximation for a near examination of their transmission likelihood versus electron transmission vitality bend. The parameter dividing, a, for the NEGF estimation was accepted equivalent to the hundredth of the encasing layer thickness. This was discovered sufficient for sensible reenactment time. The powerful mass was expected equivalent to the free mass of the electron all through the MIM structure. Fig.3 beneath shows theof the recreated MIIM of Nb/Nb2O5 (2nm)- Ta2O5 (1nm)/Nb at 0.1V of inclination voltage. A total coordinating between AF-TMM and NEGF results is watched. Fig.3. Transmission likelihood T (Ex) versus the electron transmission vitality determined utilizing AF-TMM, NEGF, and WKB at Vb = 0.1 V for Nb/Nb2O5/Ta2O5/Nb MIIM diode. Fig.4. Vitality band graph of the MIIM diode utilized for reenactment REFERENCES J. G. Simmons, "Electric passage impact between divergent cathodes isolated by a dainty protecting film," J. Appl. Phys., vol. 34, no. 9, pp. 2581–2590, Mar. 1963. J. G. Simmons, "Summed up equation for the electric passage impact between comparable anodes isolated by a flimsy protecting film," J. Appl. Phys., vol. 34, no. 6, pp. 1793–1803, 1963. R. Stratton, "Volt-current attributes for burrowing through protecting movies," J. Phys. Chem. Solids, vol. 23, no. 9, pp. 1177�>

GET ANSWER