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Select one of the security technologies you identified in either P1 or P2. Research and evaluate its capabilities, costs, maintenance requirements, flexibility, and feasibility for implementation. The analysis should include pros and cons, potential barriers to success, vulnerabilities eliminated or reduced, convergence issues, first adopters (if the technology is new), and any other issues you deem important to consider. Use the technical evaluation methodology information obtained and discussed in previous courses such as CSIA 310 and/or 459.

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NON EQUILLIBRIUM GREEN'S FUNCTION TECHNIQUE USED FOR THE METAL-INSULATOR-METAL DIODES ANSHUMAN Hardware and Communication Dept. NIT Kurukshetra Conceptual – In this paper hypothetical investigation of NEGF strategy, including the vehicle condition and Poisson condition, is done trailed by the inference of a logical model utilizing NEGF burrowing likelihood through any number of protecting layers. Numerical NEGF test system are demonstrated coordinating with the AF-TMM test system results. Presentation THE STUDY OF burrowing marvels in Metal Insulator Metal (MIM) is a significant point for the point of the advancement of rectennas for vitality gathering and infrared identifiers applications. In spite of the fact that the enthusiasm for Metal-Insulator-Metal (MIM) diodes goes back to 1950s [1]–[4], yet they pulled in the consideration again over the most recent couple of years because of its applications, vitality gathering [5]–[8] and infrared/terahertz identifiers [9]–[11]. Prior, different scientific articulations for the burrowing transmission likelihood through MIM diodes were created dependent on WKB estimate [2]–[4]. Notwithstanding, the WKB does not think about the wave work reflections at the interface between various layers [14]. Along these lines, there came the requirement for different models to recreate the burrowing likelihood. Non Equilibrium Green Function (NEGF) [12] numerical technique is one of the strategies used to figure the burrowing transmission likelihood [15]–[18]. It is an exact numerical technique, yet it needs significant time-frame of computations on a PC in contrast with other explanatory models. Any program utilized for the reproduction of a gadget plays out an answer of vehicle condition and "Poisson" condition [19].The transport condition gives the electron thickness, n(r) and the current, I for a known potential profile U(r), while Poisson condition gives the successful U(r), felt by an electron because of the nearness of other electron in its region. Here, in this paper the Quantum transport, Green's capacities and its different conditions under non balance condition are talked about and a definite quantum mechanical displaying of the burrowing current through MIM diodes is exhibited. An explanatory articulation for the burrowing transmission likelihood is introduced utilizing the NEGF conditions for any number of encasing layers between the two metals. Fig.1. Transport of electrons for single vitality level gadget The paper is sorted out as pursues: in Section II, the vehicle conditions are examined. In area III NEGF conditions for MIM Diode is portrayed in detail. The administering conditions and numerical execution of it is sketched out. The material parameters utilized in the reproduction are additionally condensed. GENERAL TRANSPORT EQUATION How about we consider the model for a solitary gadget sandwiched between two metals 1and 2ION THE METAL-INSULATOR.ce of other electron in its vicinity.port and "111111111111111111111111111111111111111111, as appeared in fig. 1.The gadget is thought to have a solitary vitality level, Ô. Our first point is to locate the quantity of electrons, N in the gadget. Let Ef be the Fermi level set by the work capacity of the two metal contacts under the balance condition. On applying the predisposition voltage, Vb between metal 1 and 2, the Fermi-energies of two metals gets adjusted to µ1 and µ2 individually and given as [19]: (1) This distinction in Fermi-vitality offers ascend to a non-balance condition and consequently two diverse Fermi-capacities for the two contacts. On the off chance that gadget is in harmony with metal 1, at that point number of electrons will be f1 however on the off chance that it is in balance with metal 2, number of electrons will be f2, where (2) Let and be the pace of departure of electron from gadget into metal 1 and metal 2 separately. Along these lines the flows I1 and I2 crossing metal1 and 2 interfaces are given as[20]: Furthermore, (3) For I1 = I2 = I, we get consistent state number of electrons N and current I as: (4a) (4b) Because of the connected predisposition voltage one of the store continues siphoning the electron attempting to build the number while different continues discharging it attempting to bring down the number. At last, there is a constant progression of current, I (eq. 4b) in the outer circuit. Accepting ðœ‡1 > ðœ€ > μ2 and the temperature is low enough that f1 (ε) ≡ f0 (ε − μ1) ≈ 1 and f2 (ε) ≡ f0 (ε − μ2) ≈ 0, the Eq. 4b disentangles to [21]: In the event that = (5) Eq.5 recommends that we can stream a boundless current through this one level gadget in the event that we increment, for example by coupling the gadget more and unequivocally to the metal contacts. Be that as it may, the most extreme conductance of a one-level gadget is equivalent to [20], so there must be some decrease factor. This decrease is because of the widening of the discrete level that happens on account of expanded coupling of the gadget with the two metals. This expanded discrete level can be portrayed by the circulation: With line-width of γ and move of level from ε to ε+âˆ†, where. This expanding wonders adjusts the Eqs. (4a, b) to incorporate a necessary over all energies weighted by the dispersion D(E) [13]: (6a) (6b) Utilizing mathematical control Eqs. (6a, b) progresses toward becoming: (7a) (7b) Where (8) (9) Till now we have talked about gadget with single vitality level ε. Be that as it may, in commonsense circumstance (for example for genuine gadgets) there exist numerous vitality levels. Any gadget, as a rule, can be spoken to by a Hamiltonian framework, whose eigenvalues tells about the permitted vitality levels. For instance on the off chance that we depict the gadget utilizing a powerful mass Hamiltonian H = at that point it very well may be spoken to with a (NxN) framework by picking a discrete cross section with N point and applying strategies for limited contrasts [13]. This compares to utilizing a discretized genuine space premise. Correspondingly, we characterize self-vitality lattices [∑1,2] which depict the widening and move of vitality levels because of coupling with the two metals. The required NEGF conditions currently can be acquired from Eqs(7a, b) by supplanting scalar amounts ε and σ1,2 with the comparing lattices [H] and [∑1,2], and is given as: , (10) , (11) The quantity of electrons N, in the gadget is supplanted with the thickness grid, given by: {} (12) Current is as yet spoken to by Eq. (7b). The transmission can be given as the hint of the similar to grid amount: (13) TRANSMISSION EQUATION FOR MIM DIODE USING NEGF EQUATIONS The 1D time-free single-molecule Schrödinger condition is given by [13]: Where, is the diminished Plank steady, ψ(x) is the electron wave-work, m is the compelling mass and U(x) is the potential vitality. On the off chance that it is expected that the cover layers are isolated into M network focuses having uniform dispersing, an, at that point limited distinction discretization on the 1D lattice is connected to Schrödinger condition Eq. (1) at every hub I as pursues [14]: (2) Where, speaks to the association between the closest neighbor network focuses I and i+1, Ui ≡ U (xi), and mi is the electron viable mass between the hubs I and I + 1. The coupling of the potential boundary to one side and right metal anodes is contemplated by revamping Eq. (1) for I =1 and I = M with open limit conditions communicated at Metal1/Insulator and Insulator/Metal2 interfaces. In this way, Schrödinger condition presently takes the accompanying structure [13]: (3) Where, H is the M × M Hamiltonian framework of the encasing potential, I is the M × M personality network, ψ is the wavefunction M × 1 vector and S is M × 1 vector. ∑L and ∑R are simply the M × M energies of the left and right contacts separately. Fig. 1. Capability of a pile of N separator materials under connected inclination voltage, Vb. Every protector layer is portrayed by an obstruction stature (Uj), a thickness (d j), a dielectric steady ε j, and a viable mass (m j). Presently, under a tri-inclining structure H can be modified as: ∑L and ∑R are given as: The arrangement of Eq. (1) can be given in the terms of impeded Green's capacity as where is M×M hindered Green's capacity [13]: The pace of departure of electron to either left or right metal from a given state can be thought about by characterizing two amounts, ΓL and ΓR [14]. Thus, the burrowing likelihood would now be able to be registered as [14]: COMPARISION OF NEGF MODEL WITH OTHER MODELS A model of MIIM diode was reenacted utilizing NEGF, AF-TMM and WKB Approximation for a near examination of their transmission likelihood versus electron transmission vitality bend. The parameter dividing, a, for the NEGF estimation was accepted equivalent to the hundredth of the encasing layer thickness. This was discovered sufficient for sensible reenactment time. The powerful mass was expected equivalent to the free mass of the electron all through the MIM structure. Fig.3 beneath shows theof the recreated MIIM of Nb/Nb2O5 (2nm)- Ta2O5 (1nm)/Nb at 0.1V of inclination voltage. A total coordinating between AF-TMM and NEGF results is watched. Fig.3. Transmission likelihood T (Ex) versus the electron transmission vitality determined utilizing AF-TMM, NEGF, and WKB at Vb = 0.1 V for Nb/Nb2O5/Ta2O5/Nb MIIM diode. Fig.4. Vitality band graph of the MIIM diode utilized for reenactment REFERENCES J. G. Simmons, "Electric passage impact between divergent cathodes isolated by a dainty protecting film," J. Appl. Phys., vol. 34, no. 9, pp. 2581–2590, Mar. 1963. J. G. Simmons, "Summed up equation for the electric passage impact between comparable anodes isolated by a flimsy protecting film," J. Appl. Phys., vol. 34, no. 6, pp. 1793–1803, 1963. R. Stratton, "Volt-current attributes for burrowing through protecting movies," J. Phys. Chem. Solids, vol. 23, no. 9, pp. 1177�>

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